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  _______________ge ne ra l de sc ript ion the max687/max688/max689 low-dropout linear regula- tors operate with an input-to-output voltage differ ential lim- ited only by an external pnp transistor. outputs a re fixed at 3.3v (max687/max688) or 3.0v (max689). the only external components required are a pnp pass transis tor and output, compensation, and bypass capacitors. b ase drive to the external transistor is at least 10ma, permitting output currents to exceed 1a when using high-gain t ran- sistors ( b > 100). output current limiting is implemented by limiting the external transistors base current. output voltage monitoring and shutdown functions are inclu ded. the 3.3v max687 automatically shuts down whenever the output voltage drops below 2.96v. an internal power-fail comparator also monitors the output and pro- vides an early warning of low output voltage before the device shuts down. when shut down, the output is latched off until the on input is pulsed. turning off the power supply in this way prevents battery damage du e to excessive discharge or cell-reversal. typical a pplica- tions include portable telephones and other battery -pow- ered equipment where the power supply must be disabled when the battery voltage is low. the max688 and max689 do not have an automatic shutdown function, and are identical except for the ir output voltages. each device has an active-low shu t- down-control input, used to turn its output on or o ff at any time. as shdn falls, the device enters a standby mode before fully shutting down. when in standby, the reference and comparators are fully operational, pe r- mitting the transition from normal mode to standby mode to occur at a precise voltage level on shdn . ________________________applic a t ions high-efficiency linear regulator battery-powered devices portable instruments portable telephones power supply or backup supply for memory ____________________________fe a t ure s ? fixed outputs: 3.3v (max687/max688)3.0v (max689) ? directly drives external pnp transistor ? 10ma min base-current drive for >1a output ? low dropout voltage: 100mv dropout at 650ma output (fzt749) 40mv dropout at 200ma output (fzt749) 0.8v dropout at 4a output ? power-fail output monitors the output voltage ? automatic, latched shutdown when output falls outof regulation (max687) ? precision threshold shutdown control(max688/max689) ? low supply current: 150a operating<1a shutdown ? 2.7v to 11.0v supply range ? 8-pin dip/so/max packages ? <2mv line transient with 3.4v to 3.6v input ? output accuracy <2% ______________orde ring i nform a t ion ordering information continued at end of data sheet. m ax 6 8 7 /m ax 6 8 8 /m ax 6 8 9 h igh-ac c ura c y, low -dropout line a r re gula t ors ________________________________________________________________ maxim integrated products 1 max687 q1 fzt749 r b 12 w base gnd c1 2.2 m f in blim out power-fail output 3.3v @ 500ma pfo cc +3.5v to +5v input on c3 10nf on gnd c2 68 m f __________typic a l ope ra t ing circ uit 1 2 3 4 8 7 6 5 cc base blim out gnd pfo (on) shdn in max687 max688 max689 dip/so/ m max top view ( ) are for max687 __________________pin configura t ion ca ll t oll fre e 1 -8 0 0 -9 9 8 -8 8 0 0 for fre e sa m ple s or lit e ra t ure . 19-0329; rev 0; 12/94 part max687 cpa max687csa max687cua 0c to +70c 0c to +70c 0c to +70c temp. range pin-package 8 plastic dip 8 so 8 max evaluation kit manual follows data sheet max687epa max687esa -40c to +85c -40c to +85c 8 plastic dip 8 so downloaded from: http:///
m ax 6 8 7 /m ax 6 8 8 /m ax 6 8 9 h igh-ac c ura c y, low -dropout line a r re gula t ors 2 _______________________________________________________________________________________ absolute maximum ratings electrical characteristics (v in = 3.8v, shdn = v in (max688/max689), r b = 0 , c1 = 2.2f, c2 = 10f, c3 = 10nf, t a = t min to t max , unless otherwise noted. typical values are at t a = +25c.) stresses beyond those listed under absolute maximu m ratings may cause permanent damage to the device . these are stress ratings only, and functional operation of the device at these or any other condi tions beyond those indicated in the operational sec tions of the specifications is not implied. exposur e to absolute maximum rating conditions for extended per iods may affect device reliability. input supply voltage in to gnd ..................... .......................12v terminal voltages to gnd pfo (max687) ........................................-0. 3v to v out + 0.3v pfo (max688/max689) ................................... ...-0.3v to 12v all remaining pins ................................. ....-0.3v to v in + 0.3v pfo sink current ...................................... .........................10ma pfo source current (max687)............................ ...............10ma continuous power dissipation (t a = +70c) plastic dip (derate 9.09mw/c above +70c) ......... ...727mw so (derate 5.88mw/c above +70c) .................. .......471mw max (derate 4.1mw/c above +70c) ................. .....330mw operating temperature ranges max68_c_a ......................................... ..............0c to +70c max68_e_a ......................................... ...........-40c to +85c storage temperature range .......................... ...-65c to +165c lead temperature (soldering, 10sec) ................ .............+300c max687/max688 (note 1) v base = v in - 1v pnp = fzt749, i load = 100ma (note 4) v in = 3.8v, pnp = fzt749, no load (note 3) 1a i base 10ma r b is connected from base to blim ( ), r b = 0 to 100 conditions f 10 c2 load capacitance % 2 start-up overshoot s 300 start-up time ma 70 100 130 r b + 5 r b + 5 r b + 5 base-current limit v 3.2 3.3 3.4 v out output voltage v 2.7 11.0 v in supply voltage ma 10 20 40 i base base sink current < 0.02 1 11 25 a 150 250 i gnd supply current 3.13 3.3 3.47 mv 40 v in - v out dropout voltage (note 2) mv/v 0.4 1.4 line regulation mv 45 60 load regulation units min typ max symbol parameter v in = 3.8v, i base = 1ma 3.8v v in 11.0v, 1a i base 10ma pnp = fzt749, i load = 200ma, c2 = 20f 3.8v v in 11.0v, i base = 1ma max687/max688 max689 2.9 3.0 3.1 2.85 3.0 3.15 v in = 3.5v, i base = 1ma 3.5v v in 11.0v, 1a i base 10ma max689 3.5v v in 11.0v, i base = 1ma 0.4 1.4 on standby, max688/max689 shutdown linear regulator downloaded from: http:///
m ax 6 8 7 /m ax 6 8 8 /m ax 6 8 9 h igh-ac c ura c y, low -dropout line a r re gula t ors _______________________________________________________________________________________ 3 note 1: minimum v in for regulated v out depends on the characteristics of the external pnp transistor, and on the load. the refer- ence and comparators are functional down to the min imum voltage specified, but the output may not be i n regulation. note 2: dropout voltage is defined as v in - v out when v out is 50mv below its value at v in = v nom + 1v. note 3: the start-up time specification is the time taken f rom on or shdn rising to base sinking current. v out rise time is longer and is a function of load capacitance, c2, and load resistance, r l . note 4: minimum load capacitance is a function of r l . minimum c2 = 10f for loads up to 100ma and 1f/ 10ma for higher loads. esr of c2 should be no larger than 1/100 of r l . guaranteed by design. note 5: the nominal output voltage, v nom , is defined under the default conditions of testin g: v in = 3.8v, i base = 1ma, t a = t min to t max . electrical characteristics (continued) (v in = 3.8v, shdn = v in (max688/max689), r b = 0 , c1 = 2.2f, c2 = 10f, c3 = 10nf, t a = t min to t max , unless otherwise noted. typical values are at t a = +25c.) falling v out , comparators monitor v out glitch immunity rising shdn , standby ? on shutdown standby falling v out , comparators monitor v out on, shdn falling output turns on conditions s 100 pfo , shdn transient rejection mv 70 shdn hysteresis 0.2 v ssd 1.0 1.2 v ssy v 1.25 v son shdn threshold voltages mv 110 170 v nom - v pft pfo threshold voltage below v nom (note 5) mv 7 pfo hysteresis v 2.96 v sd shutdown threshold voltage v 1.0 v ih on threshold voltage units min typ max symbol parameter i source = 50a, part on, v in = 2.7v v v out - 0.3 v oh pfo output voltage high i sink = 1.2ma, v in = 2.7v v 0.06 0.3 v ol pfo output voltage low output remains off 0.2 v il na 0.2 100 on input leakage current falling v out , com- parators monitor v out v 3.07 3.13 3.19 v pft pfo threshold voltage max688 max689 2.77 2.85 2.89 v shdn = 1.23v na -25 25 shdn input current 10hz f 10khz, i load = 200ma v pfo = 11v, v shdn > 1.25v i sink = 1.2ma, v in = 2.7v a 1 66 e n output noise voltage pfo off leakage current v 0.06 0.3 v ol pfo output voltage low 10hz f 1mhz, i load = 200ma v rms 105 falling v out , comparators monitor v out mv 20 70 v pft - v sd shutdown threshold voltage below v pft mv 7 pfo hysteresis max688/max689: shdn , pfo max687: on, pfo , shdn downloaded from: http:///
m ax 6 8 7 /m ax 6 8 8 /m ax 6 8 9 h igh-ac c ura c y, low -dropout line a r re gula t ors 4 _______________________________________________________________________________________ __________________________________________typic a l o pe ra t ing cha ra c t e rist ic s (circuits of figures 1 and 2, v in = 5v, q1 = fzt749, t a = +25c, unless otherwise noted.) 3.29679 3.29904 3.29455 3.29231 3.29007 3.28783 3.30128 3.30352 3.30576 3.30800 3.31024 3.31248 3.31472 3.31696 3.31920 3.32145 0 50 100 number of units 250 200 150 m ax688 output voltage distribution max687/9-01 output voltage (v) 3.28365 3.28722 3.29078 3.29435 3.29792 3.30149 3.30505 3.30862 3.31219 3.31576 3.31932 3.32289 0 50 100 250 200 150 m ax687 output voltage distribution max687/9-02 output voltage (v) number of units 2.98975 2.99150 2.99324 2.99499 2.99674 2.99848 3.00023 3.00198 3.00372 3.00547 3.00721 3.00896 3.01071 3.01245 3.01420 3.01595 0 50 100 250 200 150 m ax689 output voltage distribution max687/9-03 output voltage (v) number of units 7 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 gnd current vs. dropout voltage max687/9-7 v in - v out (v) gnd current (ma) 300ma load 100ma load 10ma load 0 0.05 0.10 0.15 0.20 0.25 0.30 0 200 600 1000 1400 1800 dropout voltage vs. load current max687/9-05 load current (ma) v in - v out (v) q1 = fzt749 r b = 0 w observe maximum power dissipation limit of external pass transistor. 0 1 2 3 4 5 6 0 200 400 600 800 1000 1200 gnd current vs. load current max687/9-06 load current (ma) gnd current (ma) 7 6 5 4 3 2 1 0 08 12345 7 6 gnd current vs. dropout voltage max687/9-8 v in - v out (v) gnd current (ma) 300ma load 100ma load 10ma load 146 126 no-load supply current vs. tem perature 130 128 134 132 138 136 142 144 140 max687/9-9 temperature (c) supply current ( m a) -55 -25 0 25 50 75 100 125 1.0 0 0 200 600 1000 dropout voltage vs. load current 0.2 0.1 0.4 0.3 0.6 0.5 0.8 0.9 0.7 max687/9-5 load current (ma) v in - v out (v) 400 800 q1 = 2n2907 r b = 0 w downloaded from: http:///
m ax 6 8 7 /m ax 6 8 8 /m ax 6 8 9 h igh-ac c ura c y, low -dropout line a r re gula t ors _______________________________________________________________________________________ 5 0 0.0500 0.1000 0.1500 0.2000 0.2500 0.3000 -55 -25 0 25 50 75 100 125 shutdown supply current vs. tem perature max687/9-10 temperature (c) shutdown supply current ( m a) 3.280 3.285 3.290 3.295 3.300 3.305 3.310 3.315 output voltage vs. tem perature max687/9-11 temperature (c) output voltage (v) -55 -25 0 25 50 75 100 125 i load = 70ma c1 = 2.2 m f c2 = 20 m f c3 = 10nf line-transient response v out 3.3v 1mv/div v in 3.6v v in 3.4v 2ms/div i load = 200ma c1 = 2.2 m f c2 = 20 m f c3 = 10nf line-transient response v out 3.3v 1mv/div v in 3.6v v in 3.4v 2ms/div v in = 3.4v load-transient response v out 3.3v 10mv/div 500ma 0ma 100 m s/div i load 200ma/div v in = 3.5v load-transient response v out 3.3v 10mv/div 500ma 0ma 100 m s/div i load 200ma/div ____________________________typic a l ope ra t ing cha ra c t e rist ic s (c ont inue d) (circuits of figures 1 and 2, v in = 5v, q1 = fzt749, t a = +25c, unless otherwise noted.) i load = 500ma c1 = 2.2 m f c2 = 68 m f c3 = 10nf m ax687/m ax688 power-up and exit from shutdown v in 5v/div v out 1v/div shdn 5v/div 1ms/div 80 0 10 100 1k 10k 100k m ax687/m ax688 ripple rejection vs. frequency 10 20 max687/9-16 frequency (hz) ripple rejection (db) 30 40 50 60 70 c2 = 20 m f v in = 4.3v min i load = 20ma v in = 3.6v min i load = 200ma downloaded from: http:///
2 m ax 6 8 7 /m ax 6 8 8 /m ax 6 8 9 h igh-ac c ura c y, low -dropout line a r re gula t ors 6 _______________________________________________________________________________________ ___________________________________________________ ___________pin de sc ript ion name function 1 in positive input voltage, 2.7v to 11.0v 2 on (max687) on activates the regulator when pulsed high. in or der for the regulator to remain on, on must remain high until v out exceeds the internal shutdown threshold voltage. t he max687 is shut down when v out < 2.96v, and remains latched off until on is pulsed high. w hen powered up, the max687 does not start up until on is pulsed high. connect to v in if not used. pin shdn (max688/ max689) shdn is a three-level input that controls the mode of op eration. the device is on when v shdn > 1.25v. the output is disabled and the supply current is re duced (i in < 25a, standby mode) when v shdn < 1.2v, and is fully off (i in < 1a, shutdown mode) when v shdn < 0.2v. connect shdn to in if the shutdown func- tion is not used. pfo is low when shdn is low (below 0.2v). 3 pfo power-fail output. pfo trips when v out is 170mv below nominal v out at i base = 1ma. pfo sources and sinks current in the max687, but is an open drain i n the max688/max689. when shut down, pfo is always low and sinks current. leave pfo open if not used. 7 base base drive for the external pnp transistor. curren t limiting is controlled using a resistor (r b ) connected between base and blim. for maximum output current, connect base to blim. 6 blim base current limit. a resistor (r b ) connected between base and blim sets the maximum base drive to the pnp transistor: i base 0.1v / (r b + 5 ). this limits quiescent current rise during dropo ut and also pro- vides current limiting without using a current-sens e resistor in the collector of the external pnp, th us not impacting dropout. output current limiting accurac y depends on how well the external pnp beta (h fe ) is controlled. connect to base if not used. 5 out regulator output. max687/max688, 3.3v; max689, 3.0 v. 4 gnd ground 8 cc compensation capacitor. connect a non-polarized ca pacitor (10nf to 100nf) from cc to gnd. _______________de t a ile d de sc ript ion the max687/max688/max689 are precision low- dropout linear regulators employing external pnp tr an- sistors to achieve a wide range of output currents at voltages of 3.0v or 3.3v. the maximum base current for the pnp can be limited using a resistor. limit ing the base drive keeps high currents from being wasted when the device is in dropout (e.g., at low input v olt- ages), and limits the regulators output current. the dropout voltage is limited only by the pnp transist ors v ce(sat) . the power-fail output (pfo ) goes low when the output voltage drops 170mv below the nominal level. the three devices differ in their output voltages, in their shutdown-control functions, and in pfo s output drive (see table 1). the max687s output voltage is internally monitored ; a falling v out is signaled by pfo going low. as the out- put falls further, the max687 automatically enters a low- power shutdown mode, where the base drive to the external pnp is cut off. pfo trips at a minimum of 110mv below the nominal v out , and shutdown occurs by 2.96v. pfo is guaranteed to trip before the device table 1. device functions function max687 max688 max689 v out 3.3v 3.3v 3.0v shutdown control automatic at low v out . latched. use on to start. external shdn external shdn pfo sources & sinks open drain open drain downloaded from: http:///
shuts down. once the max687 is shut down, it can only be turned on again when (a) the on pin is puls ed high, and (b) the conditions that triggered shutdow n have changed (e.g., the load has been reduced or th e input voltage has increased). in order for the max 687 to latch into its on state, the on pulse must remai n high until the output voltage has risen above the shutdo wn threshold. the internal shutdown can be used to pr e- vent deep discharge of a battery, for example, to p ro- vide self backup of cmos ram or to protect the battery itself. the rc circuit attached to the on input in figure 1 achieves automatic start-up at power-on by deliveri ng a brief pulse whenever the input voltage is suddenly applied. this circuit is not suitable for applicat ions where the input voltage rises slowly. the rc value s should be chosen to keep on high until the output r ises above about 3.13v. the values shown in figure 1 fo r c4 and r1 (0.1f and 10k ) are suitable for most applications. to ensure start-up when the input vo ltage is very close to the circuits dropout voltage, whe n the circuit is used to drive a very large capacitive lo ad, or for high-power circuits (i load > 3a), increase the value of r1 to increase the on pulse width. the 3.3v max688 and the 3.0v max689 incorporate the same pfo warning whenever v out droops. however, the max688/max689 do not automatically shut down when the output voltage drops even furthe r. instead, the shdn input controls external shutdown. as shdn is pulled low, the chip first enters a low-cur- rent standby state (<25a). the threshold at which standby mode is entered is precisely controlled (2 %) so the output can be turned off at a well-defined p oint. 70mv of hysteresis between the standby and on state s prevents chatter between the two modes. the voltag e applied to the shdn pin can be derived from a resis- tive divider from v in . when v shdn is less than 1.2v, the output is off. the device is fully shut down ( <1a) when shdn is pulled below 200mv. shdn is not latched, and as shdn is raised, the max688/max689 exit shutdown and enter the standby mode. at the higher shdn threshold, the output is turned on. figure 1 shows a typical circuit for the max687, an d figure 2 shows the same circuit configured for the max688/max689. the accuracy of the output current limit depends on accurate knowledge of the pnp pass transistors cur - rent gain (h fe ). with r b = 12 , blim limits base cur- rent to 6ma (i base = 0.1v / (r b + 5 )). see base- current limiting section. the pfo comparators on all three devices, and the internal shutdown comparator on the max687, reject high-spee d spikes (<100s). this reduces the pfo outputs noise sen- sitivity, and stops the max687 from being shut down inad- vertently when there is noise on the input supply. _______________tra nsist or se le c t ion spe c ific a t ions the pnp pass transistor must meet specifications fo r current gain, power dissipation, and collector current. the h fe influences the maximum output current the cir- cuit can deliver. the largest guaranteed output cu rrent m ax 6 8 7 /m ax 6 8 8 /m ax 6 8 9 h igh-ac c ura c y, low -dropout line a r re gula t ors _______________________________________________________________________________________ 7 max687 out 3.3v @ 500ma power fail pfo cc c1 2.2 m f c4 0.1 m f blim gnd base q1 fzt749 r b 12 w c3 10nf in on +5v input gnd r1 10k w on can be driven directly from logic when r1 and c 4 are not used. c2 68 m f figure 1. max687 operating circuit max688 max689 out 3.3v/ 3.0v @ 500ma power fail pfo cc c1 2.2 m f blim gnd base q1 fzt749 r b 12 w c3 10nf in shdn +5v input gnd r2 100k c2 68 m f on / off figure 2. max688/max689 operating circuit downloaded from: http:///
m ax 6 8 7 /m ax 6 8 8 /m ax 6 8 9 h igh-ac c ura c y, low -dropout line a r re gula t ors 8 _______________________________________________________________________________________ is given by i load(max) = 10ma x h fe(min) . the tran- sistors rated power dissipation must exceed the ac tual power dissipated in the transistor. the power diss ipat- ed (pd) equals the maximum load current (i load(max) ) times the maximum input to output voltage different ial: pd = i load(max) x (v in(max) - v out ). the rated tran- sistor collector current must exceed the maximum lo ad current. suitable transistors include the zetex fz t749, and the 2n2907a (see table 2). ba se -curre nt lim it ing a comparator monitors the voltage across the extern al base-current-limiting resistor (between base and blim). this sets the maximum base current. if bas e and blim are shorted, base current is limited nomin ally to 20ma due to an internal 5 resistor in series with the external resistance. choose the base-current-limit ing resistor, r b , so the drop across it at rated load is approximately 50mv. the base drive is controlled so the voltage on blim is limited to 100mv below the voltage on base; with a 50mv nominal drop across r b + 5 , base-current drive is limited to twice the nominal. this limits base current when the external pnp is heavily saturated, such as when the regulator is in dropout due to low input v olt- age. in addition, if the external pnps h fe is defined within reasonable limits, base-current control effe ctively limits output current without a dropout voltage pen alty. ________________ca pa c it or se le c t ion bypa ss ca pa c it or (c1 ) connect a bypass capacitor from in to gnd. 4.7f makes the circuit insensitive to layout, and is suf ficient for any load. smaller values may be useddown to 0.33fwith low-esr capacitors, good board layout, and a low-impedance incoming supply. connect the bypass capacitor directly between pins 1 and 4 of the ic, using short leads. connect the em itter of the pnp transistor directly to the bypass capaci tor using a very short trace. out put ca pa c it or (c2 ) the output filter capacitor must be at least 10f. for currents above 100ma, use 1f of capacitance for every 10ma of load current (e.g., 20f for 200ma lo ad, 50f for 500ma). low-esr capacitors give best stab ili- ty and transient response. ensure that the capacit ors esr is less than 1% of the load resistance. see ta ble 2 for a list of manufacturers. sanyo os-con capacito rs are recommended for applications operating at tempe r- atures below 0c. com pe nsa t ion ca pa c it or (c3 ) connect a compensation capacitor from cc to gnd. 10nf is recommended, although higher values (up to 100nf) may also be used. higher c3 values eliminat e power-on overshoot, but extend power-up times. current flowing into or out of cc causes the regula tors reference voltage to change, resulting in shifted o utput voltage and trip thresholds. use non-polarized cap aci- tors (e.g., ceramic, polyester, etc.) to keep leaka ge cur- rents below 25na. aluminum and tantalum electrolyt ic capacitors are unsuitable because of their high lea kage currents. __________________pow e r-fa il out put the pfo output trips when v out is 170mv below nomi- nal v out at i base = 1ma. pfo sources and sinks cur- rent in the max687, but is an open drain in the max688/max689 and only sinks current. when shut down, pfo is always low regardless of the voltage at out. leave pfo open if it is not used. r mv x h i b fe(min) load(max) = () -w 50 5 downloaded from: http:///
__________applic a t ions i nform a t ion h igh-pow e r out put circ uit figure 3 shows a pseudo-darlington transistor confi gu- ration to increase load-current capability and main tain a low dropout voltage with a 4a load. a heatsink m ust be added when high power is dissipated in the pass transistor. figure 4 shows the (v in - v out ) voltage required to maintain regulation for different load currents. f igure 5 shows an oscilloscope plot of the transient respons e of a 200ma to 4a load step. m ax 6 8 7 /m ax 6 8 8 /m ax 6 8 9 h igh-ac c ura c y, low -dropout line a r re gula t ors _______________________________________________________________________________________ 9 max688 max689 out 3.3v/ 3.0v @ 4a pfo cc c1 220 m f +5v input blim gnd base q2 2n4403 c3 10nf in shdn r2 100k w c2 470 m f x3 q1 t1p42 10 w 1k w on / off power fail figure 3. 4a low-dropout circuit 1.0 0 0 4000 1000 2000 3000 dropout voltage vs. load current 0.2 0.1 0.4 0.3 0.6 0.5 0.8 0.9 0.7 max687/9-04 load current (ma) v in - v out (v) q1 = tip42 q2 = 2n4403 base = blim figure 4. dropout voltage vs. load current of fig ure 3 v out +3.3v, 20mv/div i out 1a/div 50 m s/div load-transient response figure 5. transient response for a 200ma to 4a loa d step using circuit of figure 3 downloaded from: http:///
m ax 6 8 7 /m ax 6 8 8 /m ax 6 8 9 h igh-ac c ura c y, low -dropout line a r re gula t ors 10 ______________________________________________________________________________________ table 2a. component suppliers device manufacturer production method 267 series matsuo surface mount f95 tantalum series nichicon 595 tantalum series sprague os-con series low-esr organic semiconductor sanyo through-hole lxf series united chemi-con ztx749 zetex through-hole t1p42 motorola 2n4403 motorola 2n2907a motorola cmpt2907a central semiconductor surface mount pzt2907at1 motorola fzt749 zetex capacitors bipolar transistors table 2b. manufacturers phone and fax numbers manu- facturer country telephone fax central semiconductor usa (516) 435-1110 (516) 435-1824 matsuo usa (714) 969-2491 (714) 960-6492 motorola usa (602) 244-3370 (602) 244-4015 nichicon usa (708) 843-7500 (708) 843-2798 japan +81-7-5231- 8461 +81-7-5256- 4158 sanyo usa (619) 661-6835 (619) 661-1055 japan +81-7-2070- 6306 +81-7-2070- 1174 sprague usa (603) 224-1961 (603) 224-1430 united chemi-con usa (714) 255-9500 (714) 255-9400 usa (516) 543-7100 (516) 864-7630 zetex uk +44-61-627- 5105 +44-61-627- 5467 downloaded from: http:///
m ax 6 8 7 /m ax 6 8 8 /m ax 6 8 9 h igh-ac c ura c y, low -dropout line a r re gula t ors ______________________________________________________________________________________ 11 _orde ring i nform a t ion (c ont inue d) part max688 cpa max688csa max688cua 0c to +70c 0c to +70c 0c to +70c temp. range pin-package 8 plastic dip 8 so 8 max max688epa max688esa -40c to +85c -40c to +85c 8 plastic dip 8 so max689 cpa max689csa max689cua 0c to +70c 0c to +70c 0c to +70c 8 plastic dip 8 so 8 max max689epa max689esa -40c to +85c -40c to +85c 8 plastic dip 8 so downloaded from: http:///
maxim cannot assume responsibility for use of any c ircuitry other than circuitry entirely embodied in a maxim product. no circuit patent licenses are implied. maxim reserves the right to change the cir cuitry and specifications without notice at any tim e. 12 __________________m a x im i nt e gra t e d produc t s, 1 2 0 sa n ga brie l drive , sunnyva le , ca 9 4 0 8 6 (4 0 8 ) 7 3 7 -7 6 0 0 ? 1994 maxim integrated products printed usa is a reg istered trademark of maxim integrated products. m ax 6 8 7 /m ax 6 8 8 /m ax 6 8 9 h igh-ac c ura c y, low -dropout line a r re gula t ors maxim cannot assume responsibility for use of any c ircuitry other than circuitry entirely embodied in a maxim product. no circuit patent licenses are implied. maxim reserves the right to change the cir cuitry and specifications without notice at any tim e. 12 __________________m a x im i nt e gra t e d produc t s, 1 2 0 sa n ga brie l drive , sunnyva le , ca 9 4 0 8 6 (4 0 8 ) 7 3 7 -7 6 0 0 ? 1994 maxim integrated products printed usa is a reg istered trademark of maxim integrated products. ___________________________________________________ _____pa c k a ge i nform a t ion l a c a1 b dim a a1 b c d e e h l a min 0.036 0.004 0.010 0.005 0.116 0.116 0.188 0.016 0 max 0.044 0.008 0.014 0.007 0.120 0.120 0.198 0.026 6 min 0.91 0.10 0.25 0.13 2.95 2.95 4.78 0.41 0 max 1.11 0.20 0.36 0.18 3.05 3.05 5.03 0.66 6 inches millimeters 8-pin m max micromax small outline package 0.65 0.0256 a e e h d 0.101mm 0.004 in downloaded from: http:///


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